Part Number: TSM2NB60CH 600V, 2A, Single N-Channel Power MOSFET
Specifications
Category Discrete Devices
MOSFET
N-Channel
Package TO-251 (I-PAK)
Type N-Channel
Technology Planar
Configuration Single
Status Active
AEC-Q No
VDS (V) 600
VGS ±(V) 30
ID Max. (A) 2
TJ Max. (°C) 150
RDS(ON) @ 10V Max. (mΩ) 4400
RDS(ON) @ 10V Typ. (mΩ) 3900
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 9.4
Qg (nC) @ 4.5V -
Qgd (nC) 4.7
Qgs (nC) 2.2
Ciss (pF) 249
Coss (pF) 30.7
Crss (pF) 5
MSL -
VGS(th) Max. (V) 4.5
VGS(th) Min. (V) 2.5
VGS(th) Typ. (V) 3.6
Datasheet
TSM2NB60_H1706.pdf Download
Resources
Package Outline Dimensions TO-251 (I-PAK)
TSM2NB60CH

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