Part Number: TSM4ND65CI 650V, 4A, Single N-Channel Power MOSFET
仕様書
Category 個別半導体
MOSFET
Nチャンネル
Package ITO-220
Type N-Channel
Technology Planar
Configuration Single
Status Active
AEC-Q No
VDS (V) 650
VGS ±(V) 30
ID Max. (A) 4
TJ Max. (°C) 150
RDS(ON) @ 10V Max. (mΩ) 2600
RDS(ON) @ 10V Typ. (mΩ) 1850
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 16.8
Qg (nC) @ 4.5V -
Qgd (nC) 7.6
Qgs (nC) 2.7
Ciss (pF) 596
Coss (pF) 38
Crss (pF) 1
MSL
VGS(th) Max. (V) 3.8
VGS(th) Min. (V) 2.5
VGS(th) Typ. (V) 2.9
データシート
TSM4ND65CI_A1804.pdf Download
リーソース
TSM4ND65CI

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