Product Details

料號: TSM10ND65CI
種類:
離散元件
Ciss (pF): 1863
Configuration: Single
Coss (pF): 108
Crss (pF): 9
ID Max. (A): 10
Package: ITO-220
Qg (nC) @ 10V: 39.6
Qgd (nC): 12.5
Qgs (nC): 8.1
RDS(ON) @ 10V Max. (mΩ): 800
RDS(ON) @ 10V Typ. (mΩ): 580
Status: Active
TJ Max. (°C): 150
Technology: Planar
Type: N-Channel
VDS (V): 650
VGS ±(V): 30
VGS(th) Max. (V): 3.8
VGS(th) Min. (V): 2.5
VGS(th) Typ. (V): 3
描述: 650V, 10A, Single N-Channel Power MOSFET
文件:
規格書
TSM10ND65CI_A1804
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET